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Abstract: A single-stage, symmetric Doherty power amplifier (PA) in 45 nm CMOS silicon on insulator at 28 GHz is presented. The PA achieves a saturated output power of 22.4 dBm, a peak power added ...
Qualcomm's data center entry analyzed: how the Modular acquisition, HBC memory architecture, and Arm-based C1000 CPU ...
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